Publica
Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. Measurement of the tuneable absorption in GaN-based multi-section laser diodes
| Physica status solidi. C 8 (2011), No.7-8, pp.2345-2347
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351 |
| International Workshop on Nitride Semiconductors (IWN) <2010, Tampa/Fla.> |
|
| English |
| Journal Article, Conference Paper |
| Fraunhofer IAF () |
| laser diode; group III-nitrides; absorption |
Abstract
We present an experimental technique to measure the absorption spectra of the absorber section of GaN-based multi-section laser diodes using optical gain spectroscopy. We find that the absorption of the examined laser diodes decreases with increasing negative bias, which results from a reduction of the internal field in the quantum wells by the external voltage. A maximum modal absorption as high as 250 cm(-1) at the laser wavelength of 413nm is measured at 1V absorber voltage.