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  4. Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications
 
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2011
Conference Paper
Title

Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications

Abstract
This paper reports on linear and nonlinear modeling and realization of AlGaN/GaN dual-gate HEMTs and high power amplifier (HPA) MMICs for Ku-band applications. A method to describe the extrinsic and intrinsic parts of the dual-gate structure separated from each other using a distributed modeling approach is demonstrated. A small-signal model based on this approach was developed. A scalable nonlinear model was obtained through enhancing the small-signal model by an intrinsic large-signal statespace kernel. The excellent capabilities of both the linear and nonlinear models are demonstrated on fabricated dual-gate HEMTs with 0.25 µm gate length and a total gate width between 0.3mm and 0.8mm with a varying number of fingers. A 14-18 GHz, 2.5W high power amplifier was designed and realized to illustrate the suitability of the developed models for MMIC design.
Author(s)
Dennler, P.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Raay, Friedbert van  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Seelmann-Eggebert, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ambacher, Oliver  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
IEEE MTT-S International Microwave Symposium, IMS 2011  
Conference
International Microwave Symposium (IMS) 2011  
DOI
10.1109/MWSYM.2011.5972785
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • AlGaN/GaN

  • cascode

  • dual-gate

  • HEMTs

  • Ku-Band

  • large-signal modeling

  • power amplifier

  • MMIC

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