Abstract
For InGaN/GaN multiple quantum well structures a correlation of surface morphology and photoluminescence fluctuations has been established by comparing atomic force microscopy images with PL measurements of the same area. The two analyzed samples were grown simultaneously, but on different substrates and therefore with different dislocation densities. Their PL peak wave lengths lie in between 510 nm and 520 nm. Meandering structures observed for both samples by micro-photoluminescence (PL) are in the case of the sample on GaN substrate not created by threading dislocations. Threading dislocations may influence the development of meandering structures but do not cause them.