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  4. Temperature-dependent photoluminescence measurements on a sub-micrometer length scale on green light emitting InGaN/GaN quantum wells
 
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2011
Journal Article
Title

Temperature-dependent photoluminescence measurements on a sub-micrometer length scale on green light emitting InGaN/GaN quantum wells

Abstract
For an InGaN/GaN multiquantum well sample with low threading dislocation density (TDD), temperature-dependent microphotoluminescence measurements were performed. Evaluation of the behavior of the photoluminescence peak energy leads to the conclusion that even at a length scale of about 500?nm we still see the same S-shape of the temperature-dependent energy shift that was observed on a far larger scale. The behavior of the temperature-dependent full width at half maximum of the spectra and the integrated intensity leads to similar conclusions. We therefore demonstrate that the phenomenon responsible for the S-shape acts on a length scale that is far smaller than 500?nm. In addition, the behavior of the integrated intensity shows a fluctuation of local point defect density in the analyzed sample with its low TDD.
Author(s)
Danhof, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Vierheilig, C.
Schwarz, U.T.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Meyer, T.
Peter, M.
Hahn, B.
Journal
Physica status solidi. B  
DOI
10.1002/pssb.201046108
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • InGaN

  • quantum wells

  • photoluminescence

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