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  4. Firing stable passivation with a-Si/SiNx stack layers for crystalline silicon solar cells
 
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2009
Conference Paper
Title

Firing stable passivation with a-Si/SiNx stack layers for crystalline silicon solar cells

Abstract
This paper describes a stack of hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon nitride (a-SiNx:H) which was developed and characterized with the aim to obtain a firing stable passivation layer. A surface recombination velocity below 40cm s-1 has been obtained after a firing step at 820°C, on highly doped p-type Float Zone (FZ) crystalline silicon wafers. Fourier Transform InfraRed (FTIR) spectroscopy measurements showed that most of the silicon hydrogen bounds (SiH) in the a-Si:H layer are lost after firing independently of the firing stability of the passivation. Capacitance-Voltage (CV) measurements showed that the a-Si:H layer assumed to be intrinsic is, in fact, doped n-type. The measured doping of the layer might result in a field-effect passivation on lowly doped p-type silicon surfaces. However, significant shunt losses can be expected when the stack of layers is applied for rear surface passivation on p-type silicon solar cells.
Author(s)
Saint-Cast, Pierre  
Hofmann, Marc  
Dimitrova, T.
Wagenmann, Dirk  
Rentsch, Jochen  
Preu, Ralf  
Mainwork
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM  
Conference
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) 2009  
File(s)
Download (310.31 KB)
DOI
10.24406/publica-r-364807
10.4229/24thEUPVSEC2009-2CV.2.64
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
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