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High resistivity, low loss InGaAlAs/InP optical waveguides grown by low-temperature MBE

: Kunzel, H.; Grote, N.; Albrecht, P.; Bottcher, J.; Bornholdt, C.

	IEEE Lasers and Electro-Optics Society; IEEE Electron Devices Society: Fourth International Conference on Indium Phosphide and Related Materials 1992 : April 21 - 24, 1992, Newport, Rhode Island, USA New York, NY: IEEE, 1992 ISBN: 0-7803-0529-9 ISBN: 0-7803-0530-2 ISBN: 0-7803-0531-0 pp.147-150
	International Conference on Indium Phosphide and Related Materials <4, 1992, Newport, Ri.>

	English
	Conference Paper
	Fraunhofer HHI ()
	aluminium compounds; electronic conduction in crystalline semiconductor thin films; gallium arsenide; indium compounds; integrated optics; molecular beam epitaxial growth; optical losses; optical waveguides; refractive index; semiconductor epitaxial layers; semiconductor growth; high resistivity; low loss ingaalas/InP optical waveguides; low-temperature mbe; material properties; molecular-beam epitaxy; substrate temperature; high-quality; low propagation losses; 1.06 micron; 1.55 micron; 400 to 450 degc; 104 ohmcm; inp; in0.52ga0.18al0.30as; ingaalas-InP

Abstract
The authors present a study of material properties relevant to optical waveguides of MBE (molecular-beam epitaxy) grown InGaAlAs ( gamma g=1.06 mu m) layers lattice-matched to InP. In particular, the impact of the substrate temperature was investigated. MBE growth of In0.52Ga0.18Al0.30As ( gamma g=1.06 mu m) layers in the temperature range of 400-450 degrees C was demonstrated to give high-quality optical waveguides which not only exhibit low propagation losses of well below 2 dB/cm at gamma =1.55 mu m but also high resistivity of >104 Omega -cm. The refractive index of In0.52Ga0.18Al0.30As was estimated to be 3.207+or-0.03 at gamma =1.55 mu m.

: http://publica.fraunhofer.de/documents/N-13601.html