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MBE regrowth on planar and patterned In(GaAs)P layers for monolithic integration

: Passenberg, W.; Schlaak, W.; Umbach, A.

	Shur, M.S.; Suris, R.A.: Compound Semiconductors 1996. Proceedings of the Twenty-Third International Symposium on Compound Semiconductors Bristol: IOP Publishing, 1997 (Institute of Physics - Conference Series 155) ISBN: 0-7503-0452-9
	International Symposium on Compound Semiconductors <23, 1996, St. Petersburg>

	English
	Conference Paper
	Fraunhofer HHI ()
	etching; gallium arsenide; HEMT integrated circuits; iii-v semiconductors; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; oxidation; photodiodes; semiconductor growth; surface cleaning; inGaAs mbe regrowth; patterned in(GaAs)p layers; planar in(GaAs)p layers; monolithic integration; InP based device layers; optoelectronic receiver; HEMT; waveguide integrated photodiode; low contamination levels; high surface morphological quality; wet chemical etchants; surface oxidation; uv/ozone exposure; etched steps; molecular beam epitaxy; inp; inGaAsp; inGaAs

Abstract
MBE regrowth of InP based device layers on planar and patterned In(GaAs)P structures was studied in the framework of monolithic integration of an optoelectronic receiver comprising HEMTs and a waveguide integrated photodiode. Appropriate surface cleaning prior to regrowth proved to be essential for obtaining low contamination levels and surfaces of high morphological quality. Different wet chemical etchants and surface oxidation using UV/ozone exposure have been compared. In this context MBE regrowth over etched steps was also addressed.

: http://publica.fraunhofer.de/documents/N-13179.html