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1996
Conference Paper
Title
MBE regrowth on planar and patterned In(GaAs)P layers for monolithic integration
Abstract
MBE regrowth of InP based device layers on planar and patterned In(GaAs)P structures was studied in the framework of monolithic integration of an optoelectronic receiver comprising HEMTs and a waveguide integrated photodiode. Appropriate surface cleaning prior to regrowth proved to be essential for obtaining low contamination levels and surfaces of high morphological quality. Different wet chemical etchants and surface oxidation using UV/ozone exposure have been compared. In this context MBE regrowth over etched steps was also addressed.
Language
English
Keyword(s)
etching
gallium arsenide
HEMT integrated circuits
iii-v semiconductors
indium compounds
integrated optoelectronics
molecular beam epitaxial growth
oxidation
photodiodes
semiconductor growth
surface cleaning
inGaAs mbe regrowth
patterned in(GaAs)p layers
planar in(GaAs)p layers
monolithic integration
InP based device layers
optoelectronic receiver
HEMT
waveguide integrated photodiode
low contamination levels
high surface morphological quality
wet chemical etchants
surface oxidation
uv/ozone exposure
etched steps
molecular beam epitaxy
inp
inGaAsp
inGaAs