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  4. Residual Strain in Semi-Insulating InP Wafers Treated by Multiple-Step Wafer Annealing
 
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1999
Journal Article
Title

Residual Strain in Semi-Insulating InP Wafers Treated by Multiple-Step Wafer Annealing

Abstract
By using a scanning infrared polariscope (SIRP), the residual strain was characterized in semi-insulating wafers of slightly Fe-doped InP crystals treated by multiple-step wafer annealing (MWA). The SIRP maps of annealed wafers were compared with those of the as-grown adjacent wafers. It was revealed that the optimized MWA process did not generate an addtional, unwanted residual strain but homogenized its distribution.
Author(s)
Fukuzawa, M.
Herms, M.
Uchida, M.
Oda, O.
Yamada, M.
Journal
Japanese Journal of Applied Physics. Part 1, Regular papers, short notes and review papers  
DOI
10.1143/JJAP.38.1156
Language
English
Fraunhofer-Institut für Zerstörungsfreie Prüfverfahren IZFP  
Keyword(s)
  • InP

  • SIRP

  • residual strain

  • photoelastic characterization

  • multi-step wafer annealing

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