Publica
Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. Residual Strain in Semi-Insulating InP Wafers Treated by Multiple-Step Wafer Annealing
| Japanese Journal of Applied Physics. Part 1, Regular papers, short notes and review papers 38 (1999), No.2B, pp.1156-1157
ISSN: 0021-4922 |
|
| English |
| Journal Article |
| Fraunhofer IZFP () |
| InP; SIRP; residual strain; photoelastic characterization; multi-step wafer annealing |
Abstract
By using a scanning infrared polariscope (SIRP), the residual strain was characterized in semi-insulating wafers of slightly Fe-doped InP crystals treated by multiple-step wafer annealing (MWA). The SIRP maps of annealed wafers were compared with those of the as-grown adjacent wafers. It was revealed that the optimized MWA process did not generate an addtional, unwanted residual strain but homogenized its distribution.