New manufacturing concepts for ultra-thin silicon and gallium arsenide substrates
2003,
Bock, K.,
Bleier, M.,
Köthe, O.,
Landesberger, C.
The paper reports on new manufacturing concepts for handling and processing of thin semiconductor substrates. Technologies which were formerly demonstrated for silicon wafers were recently transferred to GaAs substrates. As a result of the development work the feasibility for preparing 20 µm thin GaAs wafers showing mechanical flexibility is proven. Due to the application of dicing-by-thinning concept micro defects at the edges of ultra thin GaAs chips are practically eliminated.