2002
,
Haberger, K.
,
Bleier, M.
1995
,
Haberger, K.
,
Bleier, M.
The invention relates to a process for the destruction-free measurement of wafer thickness. Said process comprises the steps of arranging an area with high permeability on a first main surface of the wafer, arranging an inductive component adjacent to a second main surface of the wafer opposite to the first main surface of the wafer, measuring the inductance of the inductive component and calculating the thickness of the wafer from the detected inductance. In a further design version of the process according to the invention, said process comprises the creation of a magnetic field in a first area on a first main surface of the wafer, arranging a magnetic field sensor adjacent to a second main surface of the wafer opposite to the first main surface of the wafer, measuring the magnetic field strength by means of the magnetic field sensor, and calculating the thickness of the wafer from the detected magnetic field strength.