Advanced gate stack, source/drain and channel engineering for Si-based CMOS: New materials, processes, and equipment
Titel Supplements
Proceedings of the international symposium; International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, held in May 16 - 18, 2005 in Quebec City, Canada as a part of the 207th meeting of the Electrochemical Society
Institut
Electrochemical Society -ECS-, Electronics Division
Electrochemical Society -ECS-, Dielectric Science and Technology Division
Electrochemical Society -ECS-, High Temperature Materials Division