Title

Advanced gate stack, source/drain and channel engineering for Si-based CMOS: New materials, processes, and equipment

Title Supplement

Proceedings of the international symposium; International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, held in May 16 - 18, 2005 in Quebec City, Canada as a part of the 207th meeting of the Electrochemical Society

Person Involved

Corporate Author

Electrochemical Society -ECS-, Electronics Division

Electrochemical Society -ECS-, Dielectric Science and Technology Division

Electrochemical Society -ECS-, High Temperature Materials Division

Publisher

ECS

Publishing Place

Pennington

Publication Date

2005

Series

Electrochemical Society. Proceedings; 2005-5

ISBN

1-566-77463-2

Conference

International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment 2005

Electrochemical Society (Meeting) 2005

Options

Advanced gate stack, source/drain and channel engineering for Si-based CMOS: New materials, processes, and equipment