Investigation of laser recrystallization of thin Si films using numerical simulation

Numerical simulations of crystal growth of Si film and heat transport in 3D structure were made for optimization of physical and geometrical parameters used during laser recrystallization. Based on simulations we introduced a new concept called micro-absorber to modulate the temperature profile so that Si films free of grain boundaries of up to 100 mym x 50 mym have been obtained.