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2014
Journal Article
Titel
Modeling the annealing of dislocation loops in implanted c-Si solar cells
Alternative
Modellierung der Ausheilung von Versetzungsschleifen in implantierten monokristallinien Silicium-Solarzellen
Abstract
This paper is motivated by the question of how residual implantation damage degrades solar cell performance. In order to avoid such degradation, annealing processes of implanted c-Si solar cells use high thermal budgets. Still, implantation-induced dislocation loops may survive these processes. We derive two models for the annealing kinetics of dislocation loops that are suitable for the study of high thermal budgets: a model that is able to describe the parallel ripening of faulted and perfect dislocation loops and a model that explicitly implements the conservative and nonconservative processes associated with Ostwald ripening. Both models lead to a better agreement with the experiment than what has been published before.
Author(s)