Wolke, WinfriedWinfriedWolkeWagner, FlorianFlorianWagnerKrugel, GeorgGeorgKrugel2022-03-082022-03-082014https://publica.fraunhofer.de/handle/publica/310209The invention relates to a semi-conductor component comprising a base emitter, electric contacts and at least one passivation layer which is made of hydrogenated aluminum nitride or contains essentially said latter. The invention also relates to a corresponding method for the surface passivation of semi-conductor components.de621Halbleiterbauelement mit einer Passivierungsschicht aus hydriertem Aluminiumnitrid sowie Verfahren zur Oberflächenpassivierung von HalbleiterbauelementenSEMI-CONDUCTOR COMPONENT WITH A PASSIVATION LAYER MADE FROM HYDROGENATED ALUMINIUM NITRIDE AND METHOD FOR SURFACE PASSIVATION OF SEMI-CONDUCTOR COMPONENTSpatent102012016298