HCl assisted growth of thick 4H-SiC epilayers for bipolar devices

Under CopyrightKallinger, BirgitBirgitKallingerEhlers, ChristianChristianEhlersBerwian, PatrickPatrickBerwianRommel, MathiasMathiasRommelFriedrich, JochenJochenFriedrich2022-03-1216.11.20132013https://publica.fraunhofer.de/handle/publica/38125410.24406/publica-fhg-381254en4H-SiCepitaxyCVDchloride assisted growthcarrier lifetime670620530HCl assisted growth of thick 4H-SiC epilayers for bipolar devicesposter