CC BY-NC-ND 4.0Damm, AnnaAnnaDammBories, MathiasMathiasBoriesBenick, JanJanBenickHanser, MarioMarioHanserRichter, ArminArminRichterLiu, AnyaoAnyaoLiuYang, ZhongshuZhongshuYangLange, StefanStefanLangeMiclea, Paul-TiberiuPaul-TiberiuMicleaPolzin, Jana-IsabelleJana-IsabellePolzin2025-03-032025-03-032025Note-ID: 0000B76Ehttps://doi.org/10.24406/publica-4338https://publica.fraunhofer.de/handle/publica/48437510.1016/j.solmat.2025.11354210.24406/publica-4338An effective hydrogenation process for polycrystalline silicon based passivating contacts (TOPCon) is crucial to achieve a very high level of surface passivation. This work examines the hydrogenation characteristics of p-type TOPCon on textured surface morphology by applying dielectric layers such as AlOx, SiNx and stacks thereof followed by an activation in a furnace anneal or by fast-firing. In a direct comparison with n-type TOPCon, p-type TOPCon requires higher activation temperatures and a higher activation energy. For a successful integration of n-type and p-type TOPCon into bottom cell precursors with 726 mV implied Voc for tandem devices, stacks featuring AlOx are beneficial to increase the thermal stability especially for n-type TOPCon. With regards to fast-firing processes, the influence of an additional pre- or post-annealing step is investigated. The peak firing temperature can significantly be reduced when applying an annealing step beforehand and a post-firing anneal improves surface passivation to recombination current densities J0s as low as 7.9 fA/cm2 for p-type TOPCon on textured surface which is one of the lowest reported in literature.enIn Situ Boron-Doped Poly-SiSilicon Bottom CellsTOPConjournal article