Hurm, V.V.HurmBenz, W.W.BenzBerroth, M.M.BerrothBronner, WolfgangWolfgangBronnerKaufel, G.G.KaufelKöhler, KlausKlausKöhlerLudwig, M.M.LudwigOlander, E.E.OlanderRaynor, B.B.RaynorRosenzweig, JosefJosefRosenzweig2022-03-032022-03-031996https://publica.fraunhofer.de/handle/publica/18779510.1049/el:19960470A 0.85 mu m wavelength monolithic integrated optoelectronic receiver consisting of a GaAs MSM photodiode and a multi-stage AlGaAs-GaAs HEMT amplifier has been fabricated. The transimpedance is 12.6 k Omega (into 50 Omega W) and the sensitivity better than 14.7 dBm (at 12.5 Gbit/s, BER=10-9). The bandwidth of 13.0 GHz implies suitability for transmission rates up to 20 Gbit/s.enintegrated optoelectronicsintegrierte Optoelektronikoptical receiversoptischer Empfänger621667384journal article