Si-Epitaxy with Mixtures of Trichlorosilane and Silicon Tetrachloride Precursors at Different Temperatures

Drießen, MarionMarionDrießenMeyer, TomTomMeyerOhnemus, MarkusMarkusOhnemusMessmer, PascalPascalMessmerSorgenfrei, RalfRalfSorgenfreiSchindler, FlorianFlorianSchindlerWeiss, CharlotteCharlotteWeissJanz, StefanStefanJanz2024-02-152024-02-152023Note-ID: 00008256https://publica.fraunhofer.de/handle/publica/462124enSi-Epitaxy with Mixtures of Trichlorosilane and Silicon Tetrachloride Precursors at Different Temperaturespresentation