RĂ¼diger, MarcMarcRĂ¼digerGreulich, Johannes M.Johannes M.GreulichRichter, ArminArminRichterHermle, MartinMartinHermle2022-03-042022-03-042013https://publica.fraunhofer.de/handle/publica/23300510.1109/TED.2013.2262526Free carrier absorption (FCA) is a parasitic absorption process in highly doped silicon that might significantly reduce the amount of photons, potentially generating electron-hole pairs. Existing FCA parameterizations are mostly setup by evaluating absorption data in the range lambda >= 4m. If applied in the wavelength range lambda =1.0-2.0 m, including the relevant range for silicon solar cells, most parameterizations are not appropriate to describe FCA accurately. In this paper, new parameters are presented using optical simulation on the base of experimental reflection data to enhance the quantification of FCA losses in the considered wavelength range.enSolarzellen - Entwicklung und CharakterisierungSilicium-PhotovoltaikCharakterisierung von Prozess- und Silicium-MaterialienHerstellung und Analyse von hocheffizienten SolarzellenSolar CellCoefficientsReflectionRecombinationSemiconductors621621Parameterization of free carrier absorption in highly doped silicon for solar cellsjournal article