Effects of ingot and wafer annealing of the properties of undoped semi-insulating GaAs. Comparison with in-alloyed dislocation-free as grown GaAs

Loehnert, K.K.LoehnertNagel, G.G.NagelWettling, W.W.Wettling2022-03-082022-03-081986https://publica.fraunhofer.de/handle/publica/314224enGaAssemiisolierende HomogenitaetWärmebehandlung621667Effects of ingot and wafer annealing of the properties of undoped semi-insulating GaAs. Comparison with in-alloyed dislocation-free as grown GaAsconference paper