Growth kinetics and electrical performance of silicon oxide layer grown by RTP in pure N2O ambient

Lange, P.P.LangeHartmannsgruber, E.E.HartmannsgruberNaumann, F.F.Naumann2022-03-092022-03-091994https://publica.fraunhofer.de/handle/publica/322579en621Growth kinetics and electrical performance of silicon oxide layer grown by RTP in pure N2O ambientconference paper