Silicon carbide in power electronics: Overcoming the obstacle of bipolar degradation

Under CopyrightFriedrich, J.J.FriedrichKallinger, B.B.KallingerEhlers, C.C.EhlersBerwian, P.P.Berwian2022-03-129.4.20152014https://publica.fraunhofer.de/handle/publica/38699010.24406/publica-fhg-386990en670620530Silicon carbide in power electronics: Overcoming the obstacle of bipolar degradationpresentation