Hurm, V.V.HurmLudwig, M.M.LudwigRosenzweig, JosefJosefRosenzweigBenz, W.W.BenzBerroth, M.M.BerrothBosch, R.R.BoschBronner, WolfgangWolfgangBronnerHülsmann, A.A.HülsmannKöhler, KlausKlausKöhlerRaynor, B.B.RaynorSchneider, J.J.Schneider2022-03-032022-03-031993https://publica.fraunhofer.de/handle/publica/18231410.1049/el:19930006A monolithic optoelectronic receiver consisting of an MSM photodiode and a two-stage amplifier has been fabricated using an enhancement/depletion 0.3Mym recessed-gate AlGaAs/GaAs HEMT process. The bandwidth of 14.3GHz implies suitability for transmission rates of up to 20Gbit/s. The transimpedance is 670Omega (into 50Omega) and the projected sensitivity is - 16.4 dBm (BER is equal to 10highminus9).enintegrated optoelectronicsintegrierte Optoelektronikoptical receiversoptischer Empfänger621667384journal article