Glatthaar, MarkusMarkusGlatthaarKafedjiska, I.I.KafedjiskaCimiotti, GiselaGiselaCimiottiBivour, MartinMartinBivourHopman, SybilleSybilleHopman2022-03-052022-03-052017https://publica.fraunhofer.de/handle/publica/24925410.1016/j.solmat.2017.05.044As the efficiency of silicon solar cells increases continuously, recombination at the metal contacts becomes more and more limiting, unless the contacts are passivated. Passivating contact layers on the front side, however, usually lead to parasitic absorption. To prevent this we develop a new self-aligned deposition process to implement a passivating layer only under the metal contacts. As passivating layer for the contacts on an optically highly transparent boron emitter we use PEDOT:PSS, which can be electro-polymerized at an anodic surface in an aqueous electrolyte. This electro-deposition technique is used to deposit PEDOT:PSS in the openings of the patterned dielectric passivation layers on the boron emitter of an n-type silicon solar cell. We demonstrate that the electrical properties of the electro-deposited PEDOT:PSS layer are suitable for a passivating contact layer and that the Fermi-level is de-pinned at the interface with silicon.enSolarzellen - Entwicklung und CharakterisierungPhotovoltaikSilicium-PhotovoltaikKontaktierung und Strukturierungmetallizationheterojunction solar cell621journal article