Stolz, W.W.StolzHauser, M.M.HauserPloog, K.K.PloogRamsteiner, M.M.RamsteinerWagner, J.J.Wagner2022-03-022022-03-021989https://publica.fraunhofer.de/handle/publica/17722010.1063/1.101695Raman scattering by local vibrational modes has been used to study the incorporation of Si in single delta-doped GaAs layers. Placing the doping spike at different depths underneath the surface, a depth profile of the dopant concentration incorporated on lattice sites has been obtained. For samples grown by molecular beam epitaxy under conditions which are known to lead to a significant broadening of the doping spike, the applied Raman technique reveals the incorporation of Si on Ga sites with a broadening of the Si distribution in excess of 20 nm.endelta-dopingDelta-Dotierunglocal vibrational modeslokalisierte Schwingungsmoderaman spectroscopyRamanspektroskopieSi-doped GaAsSi-dotiertes GaAs621667journal article