Principle of lifetime-engineering in 4H-SiC by ion implantation

Under CopyrightErlekampf, JürgenJürgenErlekampfKallinger, BirgitBirgitKallingerBerwian, PatrickPatrickBerwianRommel, MathiasMathiasRommelFriedrich, JochenJochenFriedrichFrey, LotharLotharFreyErlbacher, TobiasTobiasErlbacher2022-03-1424.10.20182018https://publica.fraunhofer.de/handle/publica/40188410.24406/publica-fhg-401884en670620530Principle of lifetime-engineering in 4H-SiC by ion implantationposter