Lim, T.T.LimBenech, P.P.BenechJimenez, J.J.JimenezFournier, J.-M.J.-M.FournierHeitz, B.B.HeitzBourgeat, J.J.BourgeatGaly, P.P.Galy2022-03-052022-03-052015https://publica.fraunhofer.de/handle/publica/24604310.1109/TMTT.2015.2478000The vertical shrinkage of the advanced CMOS processes thicknesses makes electrostatic discharge (ESD) issues become more significant. RF and millimeter-wave (mm-wave) circuits are very sensitive to the ESD components' capacitive parasitic effect. Surface area is a key factor as well in an ESD protection circuit for mm-wave applications. This paper presents silicon-verified ESD solutions, which fulfill physical dimensions, ESD robustness, and broadband frequencies requirements.en621journal article