GaSb-based high-power and high-brightness semiconductor lasers emitting at >= 2 µm

Wagner, J.J.WagnerKelemen, M.T.M.T.Kelemen2022-03-112022-03-112010https://publica.fraunhofer.de/handle/publica/37030010.1109/PHOTONICS.2010.5698755en667GaSb-based high-power and high-brightness semiconductor lasers emitting at >= 2 µmconference paper