Hurm, V.V.HurmBenz, W.W.BenzBronner, WolfgangWolfgangBronnerHülsmann, A.A.HülsmannJakobus, T.T.JakobusKöhler, KlausKlausKöhlerLeven, A.A.LevenLudwig, M.M.LudwigRaynor, B.B.RaynorRosenzweig, JosefJosefRosenzweigSchlechtweg, M.M.SchlechtwegThiede, A.A.Thiede2022-03-032022-03-031998https://publica.fraunhofer.de/handle/publica/19202110.1049/el:199813762-s2.0-0032181710A 36.5GHz bandwidth, 1.55 mu m wavelength pin-HEMT photoreceiver with a distributed amplifier has been monolithically integrated on a 3in GaAs substrate using a 0.15 mu m gate-length pseudomorphic HEMT process. The pin photodiode has a responsivity of 0.34A/W. Clearly-opened eye diagrams for a 4OGbit/s optical data stream have been demonstrated.enmonolithic integrationmonolithische IntegrationOptoelektronikPhotoempfängerphotoreceiver621667384journal article