Characterisation of GaN crystals and epilayers grown from a solution at room pressure

Meissner, E.E.MeissnerBirkmann, B.B.BirkmannHussy, S.S.HussySun, G.G.SunFriedrich, J.J.FriedrichMüller, G.G.Müller2022-03-032022-03-032005https://publica.fraunhofer.de/handle/publica/20910310.1002/pssc.200461473en670620530Characterisation of GaN crystals and epilayers grown from a solution at room pressurejournal article