High conversion gain 10-GHz narrow-band photoreceiver with a flip-chip mounted 1.55 µm waveguide photodiode

Sohn, J.J.SohnLeven, A.A.LevenHurm, V.V.HurmWalcher, H.H.WalcherBenz, W.W.BenzKuri, MichaelMichaelKuriMassler, HermannHermannMasslerBronner, WolfgangWolfgangBronnerHülsmann, A.A.HülsmannKöhler, KlausKlausKöhlerRosenzweig, JosefJosefRosenzweigSchlechtweg, M.M.Schlechtweg2022-03-092022-03-092001https://publica.fraunhofer.de/handle/publica/338042The photoreceiver is a key component for microwave fiber optic links and optoelectronic generation of microwave and millimeter-wave in phased array antennas for radar systems. The narrow-band photoreceiver at 10 GHz, developed in this work, consists of a multimode waveguide photodiode grown on InP substrate and an electrical amplifier with GaAs pseudomorphic HEMTs (pHEMTs). The photoreceiver with a monolithically integrated surface illuminated photodiode has been investigated earlier. In this work, however, the photodiode is replaced by a flip-chip mounted waveguide photodiode. The waveguide photodiode has a three times higher responsivity (1 A/W) that that of a surface illuminated photodiode (0.34 A/W), which results in a considerably higher signal-to-noise ratio. This enables fabrication of high optoelectronic conversion gain and low noise photoreceivers.enintegrated optoelectronicsintegrierte OptoelektronikphotoreceiverPhotoempfängerwaveguide photodiodeWellenleiterphotodiodeHEMTflip-chip mountingFlip-Chip-Montageoptoelectronic conversion gainoptoelektronischer KonversionsfaktornoiseRauschen621667High conversion gain 10-GHz narrow-band photoreceiver with a flip-chip mounted 1.55 µm waveguide photodiodeSchmalbandiger 10-GHz PHotoempfänger mit hohem Konversionsfaktor und einer Flip-Chip-montierter 1,55 µm Wellenleiterphotodiodeconference paper