Rosenzweig, M.M.RosenzweigMöhrle, M.M.MöhrleDüser, H.H.DüserVenghaus, H.H.Venghaus2022-03-032022-03-031991https://publica.fraunhofer.de/handle/publica/18076010.1109/3.90008An analysis of the threshold behavior of long-wavelength ( lambda =1.55 mu m) multiquantum well separate-confinement lasers with InGaAs wells and quaternary ( lambda g=1.3 mu m) barriers is presented. Using the effective mass approximation and Fermi statistics for carriers, an approximately logarithmic dependence of optical gain on carrier density for quantum well lasers with one confined electron state is predicted theoretically. This prediction is verified by measured threshold currents of broad-area lasers of various cavity lengths and different numbers of quantum wells. Moreover, the characteristic parameters, such as transparency current density, gain constant, and absorption outside the active region, are determined.encarrier densitygallium arsenidegallium compoundsiii-v semiconductorsindium compoundslaser transitionssemiconductor junction laserssemiconductor quantum wellslong-wavelengthInGaAs wellseffective mass approximationfermi statisticslogarithmic dependenceoptical gainquantum well lasersone confined electron statethreshold currentsbroad-area laserscavity lengthscharacteristic parameterstransparency current densitygain constantabsorptionactive region1.55 micronInGaAs-InGaAsp multiquantum well separate confinement lasers621journal article