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  4. Continuous Sense-FET Current Measurement in a GaN-Based T-Type Bridge-Leg With Monolithic Bidirectional Switch
 
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2026
Journal Article
Title

Continuous Sense-FET Current Measurement in a GaN-Based T-Type Bridge-Leg With Monolithic Bidirectional Switch

Abstract
This letter introduces a GaN-based T-type bridge-leg using three GaN power ICs, including a monolithic bidirectional switch (MBDS), with a novel sense-FET-based method for continuous phase current measurement. Experimental results at 200 V demonstrate the current sensing up to ±4 A across all four operating quadrants. The approach could enable high-bandwidth, nearly lossless current measurement, and is applicable to various converter topologies.
Author(s)
Basler, Michael  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Reiner, Richard  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Fugmann, Daniel  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Benkhelifa, Fouad  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mönch, Stefan  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
IEEE transactions on power electronics  
Open Access
File(s)
Download (1.25 MB)
Rights
CC BY 4.0: Creative Commons Attribution
DOI
10.1109/TPEL.2026.3682261
10.24406/publica-8552
Additional link
Full text
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • current measurement

  • Gallium nitride (GaN)

  • monolithic bidirectional switch (MBDS)

  • monolithic integrated circuit

  • phase current sensing

  • power integrated circuits

  • sense-FET

  • T-type bridge-leg

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