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  4. Ferroelectric Properties of Polyvinylidene Fluoride (PVDF): Advances and Prospects for Emerging Applications
 
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January 2026
Journal Article
Title

Ferroelectric Properties of Polyvinylidene Fluoride (PVDF): Advances and Prospects for Emerging Applications

Abstract
The growing demand for high‐performance consumer electronics and telecommunication devices has driven the development of advanced, efficient, and high‐speed data storage solutions. While silicon‐based technologies have long dominated the memory market, their physical and performance limitations have spurred interest in alternative materials. Ferroelectric materials, characterized by their ability to exhibit spontaneous and reversible polarization, have emerged as promising candidates for next‐generation memory technologies. Among these, polyvinylidene fluoride (PVDF), an organic ferroelectric polymer, has gained attention due to its mechanical flexibility, lightweight nature, non‐toxicity, scalability, and ease of fabrication. This review critically evaluates the ferroelectric properties of PVDF and its potential for memory and emerging applications. PVDF's molecular structure, fabrication techniques, and performance in conventional memory technologies, such as FeRAM and FeFETs, are assessed, alongside its limitations compared to inorganic ferroelectrics like lead zirconium titanate (PZT) and hafnium zirconium oxide (HZO). Beyond conventional memory, PVDF's applications in neuromorphic computing and sensing technologies are discussed, where its ferroelectric, piezoelectric, and pyroelectric properties enable artificial synaptic plasticity, real‐time detection, and transient data storage. Additionally, PVDF‐based composites are examined, highlighting their ability to overcome intrinsic limitations of pure PVDF through the integration of organic and inorganic fillers. While PVDF may not yet match the performance of inorganic ferroelectrics in traditional metrics such as polarization strength and cycle endurance, its versatility, flexibility, and scalability make it a compelling candidate for applications in flexible electronics, biomedical devices, and the Internet of Things (IoT). This review provides a comprehensive assessment of PVDF's role in advancing next‐generation memory technologies and multifunctional electronic applications.
Author(s)
Frick, Achidi
Vrije Universiteit Amsterdam
Schreuder, David
Fraunhofer-Institut für Elektronenstrahl- und Plasmatechnik FEP  
Castro Chong, Alejandra
Fraunhofer-Institut für Elektronenstrahl- und Plasmatechnik FEP  
Hauff, Elizabeth von  
Fraunhofer-Institut für Elektronenstrahl- und Plasmatechnik FEP  
Journal
Macromolecular chemistry and physics  
Open Access
File(s)
Download (1.94 MB)
Rights
CC BY 4.0: Creative Commons Attribution
DOI
10.1002/macp.202500289
10.24406/publica-8161
Additional link
Full text
Language
English
Fraunhofer-Institut für Elektronenstrahl- und Plasmatechnik FEP  
Keyword(s)
  • FERAM

  • memory applications

  • neuromorphic computation

  • organic Ferroelectrics

  • PVDF-TrFE

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