MOSFET-Based and P-N Diode Based Temperature Sensor in a 4H-SiC CMOS Technology

This paper presents p-n diode temperature sensors and MOSFET temperature sensors in low-voltage silicon carbide (SiC) CMOS technology. The reported temperature sensors directly make use of the existing doping layers in the CMOS process, thus enabling the monolithic integration of the SiC temperature transducer and the SiC readout electronics. The temperature sensor is characterized from 25 to 200°C. The diode-based temperature sensor has a maximum sensitivity of 3.27 mV/°C and a maximum R² of 99.81%. The MOSFET-based temperature sensor achieved a maximal sensitivity of 16.5 mV/°C, however, with less linearity (R² max = 99.11%). This technology shows a unique potential for implementing harsh environment smart temperature sensors.