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  4. Electric field induced and natural second order nonlinearity in amorphous dielectric films: From chalcogenide glasses to (ultra) silicon-rich SiNx and SiOx
 
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2025
Conference Paper
Title

Electric field induced and natural second order nonlinearity in amorphous dielectric films: From chalcogenide glasses to (ultra) silicon-rich SiNx and SiOx

Abstract
Applying a dc electric field to dielectric films of arsenic sulfide, silicon rich nitride and silicon rich oxide the symmetry of these amorphous materials is broken and as a result electric field induced second harmonic generation is observed. In addition a natural field free susceptibility contribution is detected. From the quadratic field dependence of the second harmonic signal the field dependent second order susceptibilities are experimentally determined exhibiting values rivalling traditional nonlinear crystals. From the results also the basic third order susceptibility is derived which shows a strong dependence on the Si content of the SiNx and SiOx films. Finally a quasi bound state in continuum in an extended square 2D array of pillars on a SiNx-waveguide is used to enhance the TM-polarised second harmonic signal.
Author(s)
Wardenberg, Laurids
Martin-Luther-Universität Halle-Wittenberg
Freymann, Georg von  
Fraunhofer-Institut für Techno- und Wirtschaftsmathematik ITWM  
Kühling, André
Martin-Luther-Universität Halle-Wittenberg
Upadhyayula, Krishna Koundinya
Martin-Luther-Universität Halle-Wittenberg
Schilling, Jörg
Martin-Luther-Universität Halle-Wittenberg
Mainwork
Active Photonic Platforms (APP) 2025  
Conference
Active Photonic Platforms Conference 2025  
DOI
10.1117/12.3063648
Language
English
Fraunhofer-Institut für Techno- und Wirtschaftsmathematik ITWM  
Keyword(s)
  • BIC

  • bound state in continuum

  • EFISH

  • electric field induced second harmonic

  • second harmonic

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