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  4. Charge and Capacitance Sensitive Field Effect Transistor (CCSFET) for Chemical Sensing
 
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2025
Journal Article
Title

Charge and Capacitance Sensitive Field Effect Transistor (CCSFET) for Chemical Sensing

Abstract
A novel field effect transistor concept is presented, which is suitable for chemical sensing in gases as well as liquids. It consists of two separate components, a capacitor with a control gate and integrated chemical sensitive layer, and a MOS read-out transistor. A floating gate couples both components. The sensors are fully CMOS compatible and have been fabricated on 200 mm silicon wafers. With identical devices, measurements of hydrogen in air and pH values in electrolytes are presented using Pd layer and Ta2O5 layer respectively. These results demonstrate the versatility of the sensor. The possibility of detecting charge as well as capacitance variations due to chemical reactions offers new applications regarding phase change measurements and sensor calibration.
Author(s)
Eisele, Ignaz  
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
Boudaden, Jamila  
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
Neumeier, Karl  
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
Journal
IEEE Sensors Journal  
Open Access
File(s)
Download (1.01 MB)
Rights
CC BY 4.0: Creative Commons Attribution
DOI
10.1109/JSEN.2025.3596216
10.24406/publica-5415
Additional link
Landing Page
Language
English
Fraunhofer-Institut für Elektronische Mikrosysteme und Festkörper-Technologien EMFT  
Keyword(s)
  • Charge and Capacitance Sensitive Field Effect Transistor

  • ChemFET

  • Chemical sensor

  • CMOS device

  • GasFET

  • ISFET

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