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  4. A Compact Wideband Low-loss On-chip Power Combiner for High-efficiency GaN mm-wave Power Amplifiers
 
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2025
Conference Paper
Title

A Compact Wideband Low-loss On-chip Power Combiner for High-efficiency GaN mm-wave Power Amplifiers

Abstract
This article presents a generalized, compact, wideband, low-loss four-way on-chip distributed power combiner designed for high-power and high-efficiency mm-wave power amplifiers (PAs). The measured results of the proposed combiner show a significant improvement in the matching bandwidth compared to the traditional distributed matching networks (DMNs) while maintaining the same overall area. As a demonstrator, a four-stage, four-way power-combining E-band
PA covering 68 - 86 GHz with a gain of over 25 dB, a PSAT of 33.3 dBm, and an associated PAE of 21.9% is presented. To the authors’ best knowledge, this work achieves the highest PAE and gain for high-power (PSAT > 30 dBm) and wideband (bandwidth > 15 GHz) PAs in the E-band.
Author(s)
Cimbili, Bharath Kumar
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Bao, Mingquan
Ericsson (Sweden)
Friesicke, Christian  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Wagner, Sandrine  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
IEEE/MTT-S International Microwave Symposium, IMS 2025  
Conference
International Microwave Symposium 2025  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Power amplifiers

  • E-band

  • power combining

  • low-loss

  • high efficiency

  • mm-wave

  • 5G backhaul

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