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  4. From Two to Seven Level GaN π-Type Converter Operation for Increased Efficiency of Capacitive-Load Charging
 
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2024
Conference Paper
Title

From Two to Seven Level GaN π-Type Converter Operation for Increased Efficiency of Capacitive-Load Charging

Abstract
This work experimentally investigates the effect of increasing number of levels on the measured converter system efficiency, using a seven-level π-type GaN power converter for cyclic capacitive load charging/discharging. The work provides insight into the partial power processing mechanism, and estimates further expected efficiency improvement from GaN-based monolithic bidirectional switches (MBDS). This work uses two common-drain connected HEMTs as discrete bidirectional switches (DBDS). Increasing the operation mode from two to seven levels increased the charging power by 600%, but the measured losses only increased by 75%, which improved the 99.0% half-bridge efficiency to over 99.7% multilevel charging efficiency (reducing the relative losses over 4 times).
Author(s)
Mönch, Stefan  orcid-logo
Universität Stuttgart  
Basler, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Grieshaber, Daniel  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Reiner, Richard  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Söllner, Adrian
Universität Stuttgart  
Ben Nour, Ines
Universität Stuttgart  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Bartholome, Kilian  orcid-logo
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Mainwork
IEEE 11th Workshop on Wide Bandgap Power Devices & Applications, WiPDA 2024  
Conference
Workshop on Wide Bandgap Power Devices & Applications 2024  
DOI
10.1109/WiPDA62103.2024.10773264
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Keyword(s)
  • Multilevel converters

  • Partial power processing

  • Systematics

  • Gallium

  • HEMTs

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