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  4. Fast quantum-enhanced imaging with visible-wavelength entangled photons
 
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2023
Journal Article
Title

Fast quantum-enhanced imaging with visible-wavelength entangled photons

Abstract
Quantum resources can provide supersensitive performance in optical imaging. Detecting entangled photon pairs from spontaneous parametric down conversion (SPDC) with single-photon avalanche diode (SPAD) image sensor arrays (ISAs) enables practical wide-field quantum-enhanced imaging. However, matching the SPDC wavelength to the peak detection efficiency range of complementary metal–oxide–semiconductor (CMOS) compatible mass-producible SPAD-ISAs has remained technologically elusive, resulting in low imaging speeds to date. Here, we show that a recently developed visible-wavelength entangled photon source enables high-speed quantum imaging. By operating at high detection efficiency of a SPAD-ISA, we increase acquisition speed by more than an order of magnitude compared to previous similar quantum imaging demonstrations. Besides being fast, the quantum-enhanced phase imager operating at short wavelengths retrieves nanometer scale height differences, tested by imaging evaporated silica and protein microarray spots on glass samples, with sensitivity improved by a factor of 1.351 ± 0.004 over equivalent ideal classical imaging. This work represents an important stepping stone towards scalable real-world quantum imaging advantage, and may find use in biomedical and industrial applications as well as fundamental research.
Author(s)
Camphausen, Robin
Sansa Perna, Adrià
Fraunhofer-Institut für Angewandte Optik und Feinmechanik IOF  
Cuevas, Álvaro
Demuth, Alexander
Arrés Chillón, Javier
Gräfe, Markus  
Fraunhofer-Institut für Angewandte Optik und Feinmechanik IOF  
Steinlechner, Fabian Oliver  
Fraunhofer-Institut für Angewandte Optik und Feinmechanik IOF  
Pruneri, Valerio
Journal
Optics Express  
Open Access
DOI
10.1364/OE.471429
Language
English
Fraunhofer-Institut für Angewandte Optik und Feinmechanik IOF  
Keyword(s)
  • CMOS integrated circuits

  • Conversion efficiency

  • Image enhancement

  • Industrial research

  • MOS devices

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