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  4. Visible Blind Quadrant Sun Position Sensor in a Silicon Carbide Technology
 
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2022
Conference Paper
Title

Visible Blind Quadrant Sun Position Sensor in a Silicon Carbide Technology

Abstract
In this paper, we present a quadrant sun position sensor microsystem device in a silicon carbide technology that operates in a field-of-view of ±33° and reaches a mean error of 1.9° in this range. This will allow, for the first time, an inherently visible blind sun position sensor in a CMOS compatible technology. Opto-electronic integration of the photodetectors and CMOS readout circuitry on-chip is vital to compete with the performance of silicon state-of-the-art and for the concept to be adopted by industry, which is where previous implementations of visible blind sun sensors are lacking.
Author(s)
Romijn, Joost
Delft University of Technology
Vollebregt, Sten
Delft University of Technology
May, Alexander  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Erlbacher, Tobias  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Zeijl, Henk W. van
Delft University of Technology
Leijtens, Johan
Lens R&D BV
Zhang, Guoqi
Delft University of Technology
Sarro, Pasqualina M.
Delft University of Technology
Mainwork
IEEE 35th International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022  
Conference
International Conference on Micro Electro Mechanical Systems 2022  
Open Access
DOI
10.1109/MEMS51670.2022.9699533
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • 4H-SiC

  • silicon carbide

  • sun position sensors

  • UV photodetectors

  • wide bandgap semiconductors

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