Non-Uniform Illumination Impacts on O-Band InGaAsP and Metamorphic GaInAs Photonic Power Converters
Abstract
Single-junction photonic power converters designed for operation in the telecommunications O-band are measured under 1319-nm laser illumination with a range of beam diameters. Device performance is found to improve with increasing beam size as the illumination becomes more uniform. Two absorber materials are evaluated in this study, InGaAsP lattice-matched to InP and metamorphic GaInAs on lattice-mismatched GaAs with maximum efficiencies of 52.9% and 48.8% respectively.
