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  4. Study of Power Amplifier Harmonic Output Termination for two AlGaN/GaN Technologies at K-/Ka-Band
 
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2020
Conference Paper
Titel

Study of Power Amplifier Harmonic Output Termination for two AlGaN/GaN Technologies at K-/Ka-Band

Abstract
The paper investigates experimentally the effect of harmonic terminations on AlGaN/GaN power amplifiers (PA) performance at K-/Ka-band. Two technologies are compared,a 0.25 µm and 0.1 µm process. In both cases, a harmonic termination increases the achievable output power by about 10 % at the expense of bandwidth, whereas the efficiency is improved only in the first one.
Author(s)
Samis, Stanislav
Institut für Hochfrequenztechnik, Hamburg
Friesicke, Christian
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Lozar, Roger
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Maier, Thomas
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Brueckner, Peter
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Quay, Rüdiger orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Jacob, Arne
Institut für Hochfrequenztechnik, Hamburg
Hauptwerk
23rd International Microwave and Radar Conference, MIKON 2020
Konferenz
International Microwave and Radar Conference (MIKON) 2020
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DOI
10.23919/MIKON48703.2020.9253908
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tags
  • gallium nitride

  • high power amplifier

  • K-band

  • Ka-Band

  • MMICs

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