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  4. A 300GHz quadrature down-converter S-MMIC for future terahertz communication
 
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2019
Conference Paper
Title

A 300GHz quadrature down-converter S-MMIC for future terahertz communication

Abstract
This paper presents a highly broadband quadrature down-converter with a center frequency of 300GHz and a low noise amplifier (LNA) with a bandwidth of 80GHz.The operation frequency between 235GHz and 315GHz enables the usage in future wireless high data rate applications. The submillimeter-wave monolithic integrated circuits(S-MMICs)are realized using a 35 nm metamorphic high electron mobility transistor(mHEMT) technology based on InAlAs/InGaAs. The down-converter integrates a frequency multiplier by four, a buffer amplifier and a passive fundamental I/Q mixer and reaches a conversion gain of -15dB and an RF bandwidth of 60GHz. The low-noise amplifier has an average gain of 26dB over the 3dB bandwidth. A total conversion gain of the receiver of 11dB is therefore reached by combining the down-converter and the LNA.
Author(s)
Dan, Iulia
Institute of Robust Power Semiconductor Systems
Grötsch, Christopher M.
Institute of Robust Power Semiconductor Systems
Schoch, Benjamin
Institute of Robust Power Semiconductor Systems
Wagner, Sandrine  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
John, Laurenz  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Tessmann, Axel  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kallfass, Ingmar
Institute of Robust Power Semiconductor Systems
Mainwork
IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems, COMCAS 2019  
Conference
International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS) 2019  
DOI
10.1109/COMCAS44984.2019.8958300
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • 300 GHz wirelesss communication

  • broadband receiver

  • low-noise amplifier (LNA)

  • submillimeter-wave monolithic integrated circuit (S-MMIC)

  • metamorphic high electron mobility transistor technology (mHEMT)

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