Ion implanted 4H-SiC UV pin-diodes for solar radiation detection - simulation and characterization

This paper describes the fabrication, characterization, and simulation of 4H-SiC pinphotodiodes for solar UV radiation detection. The devices were produced with an aluminum implanted emitter unlike most previously published detectors which use epitaxy for all applied doping regions (see e.g. [1,2]). They were electrically characterized at different temperatures with and without UV-illumination and afterwards a spectral analysis of the photocurrent was performed. A quantum efficiency up to 55% at 260 nm will be shown. Furthermore, the capability of the diodes for visible blind sun UV monitoring e.g. within a building, is demonstrated.