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  4. An integrated 12 Gbps switch-mode driver MMIC with 5 V(PP) for digital transmitters in 100 nm GaN technology
 
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2012
Conference Paper
Title

An integrated 12 Gbps switch-mode driver MMIC with 5 V(PP) for digital transmitters in 100 nm GaN technology

Abstract
A digital switch-mode amplifier MMIC integrating an differential amplifier and driver was realized in an 100 nm GaN technology with a transit frequency of 80 GHz. The circuit operates up to a bit rate of 12 Gbps while it was designed for a current-mode amplifier chain. Each of the two driver output channels delivers an adjustable output voltage swing of up to 5 V(PP). Due to the differential amplifier input stage with a very low minimum input voltage swing of 0.5 VPP the MMIC allows a flexible operation used as limiting amplifier or digital preamplifier for a GaN final switch-mode stage. The high output power density of the GaN technology allows a further integration of the final switch-mode power amplifier stage which enables for the first time a fully integrated high power digital transmitter in GaN.
Author(s)
Maroldt, S.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Brueckner, Peter  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ambacher, Oliver  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Maier, S.
Wiegner, D.
Pascht, A.
Mainwork
7th European Microwave Integrated Circuits Conference, EuMIC 2012. Proceedings  
Conference
European Microwave Integrated Circuits Conference (EuMIC) 2012  
European Microwave Week (EuMW) 2012  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • class-S

  • digital transmitter

  • driver circuit

  • gallium nitride

  • switch-mode

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