High-speed directly and indirectly modulated VCSELs
Abstract
Recent results on directly modulated VCSELs, including high efficiency 980 nm devices operating error free at 20 Gbit/s without current adjustment between 25 and 85°C, will be reviewed. In addition, a novel electro-optically modulated (EOM) VCSEL concept employing an EOM Bragg reflector based on the Quantum Confined Stark Effect will be proposed and preliminary data presented.
