Carrier Density Imaging (CDI) is a convenient tool to measure actual lifetimes in silicon with high spatial resolution. CDI is based on the detection of infrared radiation being absorbed and emitted by free carriers. Recently, a measurement mode was developed where the experimental conditions favors the emission of free carriers. This article exemplifies the advantages of emission CDI. Measurement time can be decreased to 1 s for standard multicrystalline silicon and excellent signal to noise ratios can be achieved if the temperature of the sample is increased moderately. Measuring lifetime in a wide temperature range up to 270 °C enables spatially resolved lifetime spectroscopy. First results of an intentionally contaminated molybdenum sample and a sample of multicrystalline silicon are presented.