Beside the classical advantages of SOI, this technology offers the unique opportunity to integrate monolithically devices with vertical current pathes like high power DMOS-FETs or sensors with lateral (CMOS)-devices. The performance of sensors can be increased if analog circuits like amplifiers and/or A/D-converter are also integrated on the same chip. This can easier be done if the devices are dielectrically isolated as it is in the SIMOX-technology. Some sensors are running at an elevated temperature range above 100xC, the resulting requirements for the analog circuits can only fullfilled with the SIMOX-technology. But to run analog circuits on SIMOX care has to be taken about the Kink-effect, the BJT-breakdown, the single-transistor latch and for some applications the noise of the devices. In this paper we'll report about the results of the different approaches to deal with the mentioned items.
