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  4. Impact of iron precipitates on carrier lifetime in as-grown and phosphorus-gettered multicrystalline silicon wafers in model and experiment
 
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2014
  • Zeitschriftenaufsatz

Titel

Impact of iron precipitates on carrier lifetime in as-grown and phosphorus-gettered multicrystalline silicon wafers in model and experiment

Abstract
The impact of iron point defects on the measured injection-dependent minority carrier lifetime in silicon after different processing steps (described by the Shockley-Read-Hall equation) is well known. However, in some parts of multicrystalline silicon (mc-Si) (used for solar cells), a large share of the iron atoms is precipitated. In this study, we simulate realistic iron precipitate distributions in mc-Si after crystallization, as well as after phosphorus diffusion gettering within grains by employing the Fokker-Planck equations. Taking the Schottky contact between metallic precipitates and semiconductor into account, in a second step, we analyze the effect of recombination at iron precipitates on carrier lifetime by means of finite-element simulations. The results are compared with experimental injection-dependent lifetime measurements on a p-type mc-Si wafer before and after phosphorus diffusion. Our simulations show that in the low-lifetime edge region close to the crucible wall, a considerable share of the carrier recombination can be attributed to iron precipitates in both the as-grown and in the phosphorus-diffused state. In addition, the simulated injection dependences of iron precipitates and iron interstitials differ significantly, with the precipitates influencing the carrier lifetime especially in the mid- to high-injection range, which is supported by carrier lifetime measurements.
Author(s)
Kwapil, W.
Schön, J.
Schindler, F.
Warta, W.
Schubert, M.
Zeitschrift
IEEE Journal of Photovoltaics
DOI
10.1109/JPHOTOV.2014.2304355
File(s)
N-290812.pdf (1.68 MB)
Language
Englisch
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Tags
  • Solarzellen - Entwick...

  • Silicium-Photovoltaik...

  • Silicum-Kristallisati...

  • Impurities

  • Simulation

  • Verunreinigungen

  • Präzipitate

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